Semiconductor package with small gate clip and assembly method

ABSTRACT

A method of manufacturing a semiconductor package having a small gate clip is disclosed. A first and second semiconductor chips, each of which includes a source electrode and a gate electrode at a top surface, are attached on two adjacent lead frame units of a lead frame such that the lead frame unit with the first chip formed thereon is rotated 180 degrees in relation to the other lead frame unit with the second semiconductor chip formed thereon. A first and second clip sets are mounted on the first and second semiconductor chips, wherein the first clip set is connected to the gate electrode of the first chip, the source electrode of the second chip, and their corresponding leads and the second clip set is connected to the gate electrode of the second chip, the source electrode of the first chip and their corresponding leads.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Patent Application is a Continuation of a pending application Ser.No. 14/849,604 filed on Sep. 10, 2015. The pending application Ser. No.14/849,604 is a Divisional application of an application Ser. No.14/502,902 filed on Sep. 30, 2014 that is issued as a patent U.S. Pat.No. 9,171,788. The Disclosure made in the patent application Ser. Nos.14/849,604 and 14/502,902 are hereby incorporated by reference.

FIELD OF PRESENT INVENTION

The present invention relates to a semiconductor packaging technology,and in particular relates to a semiconductor package with a small gateclip and a packaging method thereof.

BACKGROUND OF RELATED ART

In the process of manufacturing a semiconductor device, in order toachieve a higher current and a lower resistance, metal clips such ascopper clips are widely used in power devices. As shown in FIG. 1, bothclip bonding and wire bonding are used for source and gate connectionsin a semiconductor device. A metal clip 1′ is commonly used for theconnection of a source electrode 3′ on the semiconductor chip to a leadwhile a wire bonding is commonly used to connect a gate electrode 4′ onthe semiconductor chip to another lead. However, in practicalapplications, using both wire bonding and clip bonding on the samesemiconductor device results in a more complicated process and lowproduction yield. In addition, wire bonding cannot support a largecurrent and at high frequencies and the length of the wire affects theinductance of the semiconductor.

Conventional technology has used metal clips 1′ for the connection ofboth source electrode 3′ and gate electrode 4′ on the same semiconductoras shown in FIG. 2. However, to support this technique, a larger clip isneeded for the gate connection hence resulting in a big gate opening forsoldering, which leaves some residue that is difficult to clean and willaffect the wiring in between layers of the device during themanufacturing process.

It is within this context that embodiments of the present inventionarise.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of this invention are described in more detail withreference to the accompanying drawings. However, the accompanyingdrawings are for the purpose of descriptions and illustrations only anddo not impose limitation to the scope of the present invention:

FIG. 1 is a schematic view of a prior art package structure using bothwire bonding and clip bonding for source and gate connections.

FIG. 2 is a schematic view of a prior art package structure using onlyclip bonding for both source and gate connections.

FIG. 3 is a top view of a clip structure according to the firstembodiment of the present invention.

FIG. 4 is a cross-sectional view of the clip structure in FIG. 3 along aline A-A.

FIG. 5 is a top view of another clip structure according to the secondembodiment of the present invention.

FIG. 6 is a cross-sectional view of the clip structure in FIG. 5 along aline A-A.

FIG. 7 is a top view of another clip structure according to the thirdembodiment of the present invention.

FIG. 8 is a cross-sectional view of the clip structure in FIG. 7 along aline A-A.

FIG. 9 is a schematic diagram illustrating a top view of a lead frame.

FIG. 10 is a schematic diagram illustrating the chips mounted on thelead frame;

FIGS. 11A-11B are top view and cross-sectional view of the clip framemounted on chips in the structure of FIG. 10.

FIGS. 12A-12B are top view and cross-sectional view of the packagingprocess of the structure of FIGS. 11A-11B.

FIGS. 13A-13B are top view and cross-sectional view of the cuttingprocess of the structure of FIGS. 12A-12B.

FIG. 14 is a schematic diagram of complete packages with a small gateclip structure of the present invention.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

In conjunction with the accompanying drawings, the specific embodimentsof the present invention are further described below.

FIG. 3 is a top view of a clip frame structure according to a firstembodiment of the present invention. The clip frame structure includestwo identical clip sets placed side by side with one clip set beinginverted , i.e., rotated 180 degrees, in relation to the other, thusconstituting as a rotational symmetry of order 2 image of each other.The first clip set includes a gate clip 301 and a source clip 303connected together by a first tie bar 305. The second clip set includesa source clip 302 and a gate clip 304 connected together by a second tiebar 305.

The first and second clip sets are connected together by a third tiebars 305, where the source clip 302 is connected to the source clip 303through the third tie bar 305. In the first embodiment of the presentinvention, the width of the tie bars 305 is less than or equal to thewidth of the gate clip. Through the tie bars 305, the shape of the clipstructure becomes S-shaped or reverse S-shaped.

As mentioned above, the first clip set and the second clip set areinverted in relation to each other, where the gate clip 301 is parallelto and separated from the source clip 302, and the source clip 303 isparallel to and separated from gate clip 304. Further, protrusions 320on the edges of the gate clip 301, the source clip 302, the source clip303 and the gate clip 304 are used for connecting to adjacent clip framestructures.

FIG. 4 is a cross-sectional view of the clip structure of FIG. 3 along aline A-A, specifically is the cross-sectional view of the second clipset including the source clip 302 electrically connected to the gateclip 304 through a tie bar 305. The source clip 302 comprises a sourceelectrode contact area 308 at one end electrically connected to a sourcelead contact area 309 at the other end while the gate clip 304 comprisesa gate electrode contact area 313 at one end electrically connected to agate lead contact area 312 at the other end. The source lead contactarea 309 adjacent the tie bar 305 is used for connecting to a sourcelead of a lead frame, and the gate lead contact area 312 adjacent thetie bar 305 is used for connecting to a gate lead of the lead frame. Thesource electrode contact area 308 connected to the outer end of thesource clip 302 is used for connecting to a source electrode of a firstsemiconductor chip, and the gate electrode contact area 313 connected tothe outer end of the gate clip 304 is used for connecting to a gateelectrode of a second semiconductor chip, which will be described indetail later. The source lead contact area 309 and the gate lead contactarea 312 are located in a first plane, and the lead 308 and 313 arelocated in a second plane, where the first plane of the source lead 309and the gate lead 312 is lower than the second plane of the lead 308 andthe lead 313.

The cross-sectional view of the first clip set including the gate clip301 and the source clip 303 connecting together by a tie bar 305 issimilar as that of the second clip set described in FIG. 4. The gatelead contact area 307 adjacent the tie bar 305 is used for connecting toa gate lead of the lead frame. The source lead contact area 310 adjacentthe tie bar 305 is used for connecting to a source lead of the leadframe. The gate electrode contact area 306 connected to the outer end ofthe gale clip 301 is used for connecting to a gate electrode of thefirst semiconductor chip. The source electrode contact area 311connected to the outer end of the source clip 303 is used for connectingto a source electrode of the second semiconductor chip, which will bedescribed in detail later.

FIG. 5 illustrates a top view of another clip frame structure accordingto a second embodiment of the present invention. The clip framestructure can be made of a metal such as copper and includes twoidentical clip sets placed side by side with one clip set being invertedin relation to the other, thus constituting as a rotational symmetry oforder 2 image of each other. The first clip set includes a gate clip 501and a source clip 503 connected together by a first tie bar 505. Thesecond clip set includes a source clip 502 and a gate clip 504 connectedtogether by a second tie bar 505. The first and second clip sets areconnected together by a third tie bars 505, where the source clip 502 isconnected to the source clip 503 through the third tie bar 305. Asmentioned above the first clip set and the second clip set are invertedin relation to each other, where the gate clip 501 is parallel to andseparated from the source clip 502, and the source clip 503 is parallelto and separated from gate clip 504.

In this embodiment, the gate clip 501 and the gate clip 504 includessome notches depending on the requirement of the actual fabrication ofsemiconductor devices. For example, the circuit devices may be formed onthe first and second semiconductor chips, as such the notches 522 formedon the gate clips 501 and 504 to avoid the electrical contact with thesedevices. Similarly, the source clips 502 and 503 can also include somenotches depending on the requirement of the actual fabrication ofsemiconductor devices. In the second embodiment of the presentinvention, the width of the tie bars 505 is less than or equal to thewidth of the gate clip 501 or clip 504. Through the tie bars 505, theshape of the clip structure becomes S-shaped or reverse S-shaped.Further, protrusions 520 on the edges of the gate clip 501, the sourceclip 502, the source clip 503 and the gate clip 504 are connecting partsbetween two adjacent clip frame structures.

FIG. 6 is a cross-sectional view of the clip frame structure of FIG. 5along a line A-A, specifically is the cross-sectional view of the secondclip set including the source clip 502 connected to the gate clip 504through a connecting bar 505. The source lead contact area 509 locatedbetween the source clip 502 and the tie bar 505 is used for connectingto a source lead of the lead frame, and the gate lead contact area 512located between the tie bar 505 and the gate clip 504 is used forconnecting to source lead of the lead frame. The source electrodecontact area 508 connected at the outer end of the source clip 502 isused for connecting to a source electrode of a first semiconductor chip,and the gate electrode contact area 513 connected to the outer end ofthe gate clip 504 is used for connecting to a gate electrode of a secondsemiconductor chip, which will be described in detail later. The sourcelead contact area 509 and the gate lead contact area 512 are located ina first plane, and the source and gate electrode contact areas 508 and513 are located in a second plane, where the first plane of the sourcelead contact area 509 and the gate lead contact area 512 is lower thanthe second plane of the source electrode contact area 508 and the gateelectrode contact area 513.

The cross-sectional view of the first clip set including the gate clip501 and the source clip 503 connecting together by a tie bar 505 issimilar as that of the second clip set described in FIG. 6. The gatelead contact area 507 located between the gate clip 501 and the tie bar505 is used for connecting to a gate lead of the lead frame. The sourcelead contact area 510 located between the tie bar 505 and the sourceclip 503 is used for connecting to a source lead of the lead frame. Thegate electrode contact area 506 connected to the outer end of the galeclip 501 is used for connecting to a gate electrode of the firstsemiconductor chip. The source electrode contact area 511 connected tothe outer end of the source clip 503 is used for connecting to a sourceelectrode of the second semiconductor chip, which will be described indetail later .

FIG. 7 illustrates a top view of another clip frame structure accordingto a third embodiment of the present invention. The clip frame structurecan be made of metal such as copper and includes two identical clip setsplaced side by side with one clip set being inverted in relation to theother, thus constituting as a rotational symmetry of order 2 image ofeach other. The first clip set includes a gate clip 701 and a sourceclip 703 connected together by a first tie bar 705. The second clip setincludes a source clip 702 and a gate clip 704 connected together by asecond tie bar 705. In this embodiment, the first and second clip setsare separated from each other without internal connection. As mentionedabove the first clip set and the second clip set are inverted inrelation to each other, where the gate clip 701 is parallel to andseparated from the source clip 702, and the source clip 703 is parallelto and separated from gate clip 704. The width of the tie bars 705 isless than or equal to the width of the gate clip 701 or clip 704.Through the tie bars 705, the overall shape of the clip frame structureis two L-shaped structures mutually inverted to each other. Theprotrusions 720 on the edges of the gate clip 701, the source clip 702,the source clip 703 and the gate clip 704 are connecting parts betweentwo adjacent clip structures. In addition, since the first and secondclip sets are not connected to each other, other protrusions 720′ on theedges of the source clip 702 and the source clip 703 are needed forconnecting two adjacent clip frame structures.

FIG. 8 is a cross-sectional view of the clip structure of FIG. 7 along aline A-A, specifically is the cross-sectional view of the second clipset including the source clip 702 connected to the gate clip 704 througha connecting bar 705. The source lead contact area 709 located betweenthe source clip 702 and the tie bar 705 is used for connecting to asource lead of the lead frame, and the gate lead contact area 712located between the tie bar 705 and the gate clip 704 is used forconnecting to a gate lead of the lead frame. The source electrodecontact area 708 connected at the outer end of the source clip 702 isused for connecting to a source electrode of a first semiconductor chip,and the gate electrode contact area 713 connected to the outer end ofthe gate clip 704 is used for connecting to a gate electrode of a secondsemiconductor chip, which will be described in detail later. The sourcelead contact area 709 and the gate lead contact area 712 are located ina first plane, and the source and gate electrode contact areas 708 and713 are located in a second plane, where the first plane of the sourcelead contact area 709 and the gate lead contact area 712 is lower thanthe second plane of the source electrode contact areas 708 and the gateelectrode contact area 713.

The cross-sectional view of the first clip set including the gate clip701 and the source clip 703 connecting together by a tie bar 705 issimilar as that of the second clip set described in FIG. 8. The gatelead contact area 707 located between the gate clip 701 and the tie bar705 is used for connecting to a gate lead of the lead frame. The sourcelead contact area 710 located between the tie bar 705 and the sourceclip 703 is used for connecting to a source lead of the lead frame. Thegate electrode contact area 706 connected to the outer end of the galeclip 701 is used for connecting to a gate electrode of the firstsemiconductor chip. The source electrode contact area 711 connected tothe outer end of the source clip 703 is used for connecting to a sourceelectrode of the second semiconductor chip, which will be described indetail later .

FIGS. 9-13 illustrate a method of manufacturing a semiconductor packagewith a small gate clip according to an embodiment of the presentinvention. In the manufacturing process, a lead frame strip includes aplurality of lead frame units connected to each other (not shown). Thelead frame can be made of copper with the surface be plated with nickel,silver or gold. As shown in FIG. 9, each group 900 of the lead frametrip includes a first lead frame unit 901 and the second lead frame unit902, where the second lead frame unit 902 is rotated 180 degrees, orinverted, in relation to the first lead frame unit and is connected tothe first lead frame unit 901, thus constituting as a rotationalsymmetry of order 2 image of each other.

The first frame unit 901 has a first die pad 903 and several leadssurrounding the die pad 903, where some of the leads may be connected tothe first die pad 903, while others are separated from the die pad 903.Similarly, the second lead frame unit 902 has a second die pad 904 andseveral leads surrounding the die pad 904, where some of the leads maybe connected to the second die pad 904, while others are separated fromthe die pad 904. In the embodiment shown, a gate lead and a source leadof each lead frame unit are disposed between die pad 903 and die pad904. Alternatively, die pad 903 and die pad 904 may be disposed betweenthe gate leads and source leads of the two lead frame units (not shown).The lead frame units 901 and 902 also include a plurality of protrusions920 formed at the edges of the die pads 903 and 904, which are used forconnecting the adjacent lead frame units during mass production.

As shown in FIG. 10, the first semiconductor chip 1001 and the secondsemiconductor chip 1002, which preferably are two identical verticalpower transistors, such as MOSFETs, or IGBTs, each having a gate and asource electrode disposed at its top surface and a drain electrode at itbottom surface, are attached on the die pads 903 and 904 respectively.The first semiconductor chip 1001 is attached on die pad 903 of the leadframe unit 901, where the drain at the bottom surface of the first chip1001 (not shown) is attached on the die pad 903, while both the gateelectrode 1003 and the source electrode 1004 of chip 1001 are formed atthe top surface of the first chip 1001. The second chip 1002, which isthe same as the chip 1001, is rotated 180 degrees related to the firstchip 1001 and then attached on the die pad 904 of the lead frame unit902. The source electrode 1006 and the gate electrode 1005 of chip 1002are formed at the top surface of the second chip 1002 and the drainelectrode at the bottom of chip 1002 (not shown) is attached on the diepad 904 of the second lead frame unit 902. As mentioned above, thesecond chip 1002 attached on the die pad 904 is rotated 180 degrees inrelation to the first chip 1001 attached on the die pad 903, the leadframe unit 901 with the first chip 1101 attached thereon and the leadframe unit 902 with the second chip 1102 attached thereon constitute asa rotational symmetry of order 2 image of each other.

As illustrated in FIGS. 11A-11B, a clip frame structure of the typedepicted in FIG. 3, including a first clip set and a second clip set, isattached on the first and second chips 1101 and 1102. The first clip setincludes a gate clip 1101 and a source clip 1103 connected together by afirst tie bar 1105. The second clip set includes a source clip 1102 anda gate clip 1104 connected together by a second tie bar. The source clip1103 of the first clip set and the source clip 1102 of the second clipset are connected together by a third tie bar. The gate lead contactarea 1107 located between the gate clip 1101 and the first tie bar 1105is attached to a gate lead 1114 of the lead frame unit 901, while a gateelectrode contact area 1106 connected to the outer end of the gate clip1101 is connected to the gate electrode 1003 of the first chip 1001.

The source lead contact area 1109 located between the source clip 1102and the second tie bar 1105 is attached on the source lead 1115 of thefirst lead frame unit 901, while the source electrode contact area 1108connected to the outer end of the source clip 1102 is attached on thesource electrode 1004 of the first chip 1001.

The source lead contact area 1110 located between the source clip 1103and the tie bar 1105 is connected to a source lead 1116 of the secondlead frame unit 902, while the source electrode contact area 1111located at the outer end of the source clip 1103 is connected to thesource electrode 1006 of the second chip 1002. The gate lead contactarea 1112 located between the gate clip 1104 and the tie bar 1105 isconnected to a gate lead 1117 of the second lead frame unit 902, whilethe gate electrode contact area 1113 located at the outer end of thegate clip 1104 is connected to the gate electrode 1005 of the secondchip 1002.

In the embodiment shown, a gate lead 1114, 1117 and a source lead 1115,1116 of each lead frame unit are disposed between die pad 903 and diepad 904. Alternatively, die pad 903 and die pad 904 may be disposedbetween the gate leads and source leads of the two lead frame units (notshown). In this case, the locations of the source lead contact area andthe source electrode contact area in each source clip should be switchedand the locations of the gate lead contact area and gate electrodecontact area in each gate clip should be switched.

As shown in FIGS. 12A-12B, the structure of FIG. 11 comprising of theclip structure, semiconductor chips and lead frame units is thenencapsulated by a packaging layer 1201. As shown in FIGS. 13A-13B, afterthe packaging step, individual semiconductor devices are singulated bycutting through the molding layer and the lead frame across the tie bars1105. In an alternative embodiment, the clip structure can be modifiedsuch that the source clips 1102 and 1103 are in a plane higher that theplane of the tie bars 1105 and the gate clips 1101 and 1104, as such thesource clips 1102 and 1103 can be exposed out of the molding layer 1201for heat dissipation (not shown).

FIG. 14 illustrates two adjacent semiconductor packages with a smallgate clip of the present invention, where one package is completely thesame and is rotated 180 degrees in relation to the other. As shown inFIG. 14, each semiconductor package comprises a lead frame unit 1400preferably made of copper and having the surface plated with nickel,silver or gold. The lead frame unit 1400 includes a die pad 1401 and aplurality of leads surrounding the die pad. A plurality of protrusionsis formed on the edges of the lead frame unit for connecting theneighboring lead frame units together in a lead frame strip. Asemiconductor chip 1402 is attached on the die pad 1401, which includesa source electrode 1403 and a gate electrode 1404 on the top surface.One end of a source clip 1405 is mounted on the source electrode 1403 ofthe chip 1402 and the other end is mounted on a source lead 1406 of thelead frame unit 1400. One end of a gate clip 1407 is mounted on the gateelectrode 1404 of the chip 1402, and the other end is mounted on a gatelead 1408 of the lead frame unit 1400. The source lead 1406 and gatelead 1408 are separated from the die pad 1401 of lead frame 1400. Leadframe unit 1400, the chip 1402, source clip 1405 and gate clip 1407 areencapsulated with a packaging layer used for the protection of the wholesemiconductor device.

While the above is a complete description of the preferred embodiment ofthe present invention, it is possible to use various alternatives,modifications and equivalents. Therefore, the scope of the presentinvention should be determined not with reference to the abovedescription but should, instead, be determined with reference to theappended claims, along with their full scope of equivalents. Anyfeature, whether preferred or not, may be combined with any otherfeature, whether preferred or not. In the claims that follow, theindefinite article “A”, or “An” refers to a quantity of one or more ofthe item following the article, except where expressly stated otherwise.The appended claims are not to be interpreted as includingmeans-plus-function limitations, unless such a limitation is explicitlyrecited in a given claim using the phrase “means for.”

1. A semiconductor package comprising: a lead frame having a die pad; a semiconductor chip having a top surface and a bottom surface; the bottom surface of the semiconductor chip being directly attached to a top surface of the die pad; the top surface of the semiconductor chip having a gate electrode and a source electrode; and the bottom surface of the semiconductor chip having a drain electrode; a gate lead; a metal gate clip having a first end bottom surface, a mid-range bottom surface and a second end side surface; the first end bottom surface of the metal gate clip being directly attached to the gate electrode of the semiconductor chip; and the mid-range bottom surface of the metal gate clip being directly attached to the gate lead; a molding encapsulation covering a top surface of the lead frame and enclosing the semiconductor chip, at least a majority portion of the gate lead and at least a majority portion of the metal gate clip; wherein the second end side surface of the metal gate clip is exposed from the molding encapsulation; and wherein the mid-range bottom surface of the metal gate clip is located at a height lower than the first end bottom surface and the second end side surface of the metal gate clip.
 2. The semiconductor package of claim 1, wherein the second end side surface of the metal gate clip is co-planar with a side surface of the molding encapsulation.
 3. The semiconductor package of claim 1 further comprising a source lead; a metal source clip having a first end bottom surface, a mid-range bottom surface and a second end side surface; the first end bottom surface of the metal source clip being directly attached to the source electrode of the semiconductor chip; and the mid-range bottom surface of the metal source clip being directly attached to the source lead; wherein the molding encapsulation encloses at least a majority portion of the metal source clip; and wherein the second end side surface of the metal source clip is exposed from the molding encapsulation.
 4. The semiconductor package of claim 3, wherein the second end side surface of the metal source clip is co-planar with a side surface of the molding encapsulation.
 5. The semiconductor package of claim 3, wherein the second end side surface of the metal gate clip contacts a second end side surface of an other metal source clip of an other semiconductor package to form a first contacted metal clip; wherein the second end side surface of the metal source clip contacts a second end side surface of an other metal gate clip of the other semiconductor package to form a second contacted metal clip; and wherein the first contacted metal clip is a rotational symmetry of order 2 image of the second contacted metal clip. 